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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?c6 600vcoolmos?c6powertransistor IPL60R2K1C6S datasheet rev.2.0 final powermanagement&multimarket
2 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet thinpak5x6 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?c6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. theoffereddevicesprovideallbenefitsofafastswitchingsjmosfet whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingpwm stagesfore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server, telecomandups. pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 2.1 w q g,typ 6.7 nc i d,pulse 5.4 a e oss @400v 0.76 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks IPL60R2K1C6S thinpak 5x6 smd 60c62k1 see appendix a
3 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 2.3 1.5 a t c = 25c t c = 100c pulsed drain current 2) i d,pulse - - 5.4 a t c =25c avalanche energy, single pulse e as - - 11 mj i d =0.4a; v dd = 50v avalanche energy, repetitive e ar - - 0.06 mj i d =0.4a; v dd = 50v avalanche current, repetitive i ar - - 0.4 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation (non fullpak) p tot - - 21.6 w t c =25c operating and storage temperature t j , t stg -40 - 150 c - continuous diode forward current i s - - 2.0 a t c =25c diode pulse current 2) i s,pulse - - 5.4 a t c = 25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c maximum diode commutation speed 3) di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c 3thermalcharacteristics table3thermalcharacteristics(nonfullpak) values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 5.8 c/w - thermal resistance, junction - ambient r thja - 35 62 c/w device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm 2 (one layer 70 m m thick) copper area for drain connection and cooling. pcb is vertical without blown air. soldering temperature, wavesoldering only allowed at leads t sold - - 260 c reflow msl1 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g
5 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =0.25ma gate threshold voltage v (gs)th 2.50 3 3.50 v v ds = v gs , i d =0.06ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =600v, v gs =0v, t j =25c v ds =600v, v gs =0v, t j =150c gate-source leakage curent i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.89 4.91 2.10 - w v gs =10v, i d =0.76a, t j =25c v gs =10v, i d =0.76a, t j =150c gate resistance r g - 12 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 140 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 12 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 8.5 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 30 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 7 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w rise time t r - 7 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w turn-off delay time t d(off) - 30 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w fall time t f - 50 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 0.8 - nc v dd =480v, i d =0.9a, v gs =0to10v gate to drain charge q gd - 3.6 - nc v dd =480v, i d =0.9a, v gs =0to10v gate charge total q g - 6.7 - nc v dd =480v, i d =0.9a, v gs =0to10v gate plateau voltage v plateau - 5.4 - v v dd =480v, i d =0.9a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v (br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to80%v (br)dss
6 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =0.9a, t f =25c reverse recovery time t rr - 180 - ns v r =400v, i f =0.9a,d i f /d t =100a/s reverse recovery charge q rr - 0.67 - c v r =400v, i f =0.9a,d i f /d t =100a/s peak reverse recovery current i rrm - 7.1 - a v r =400v, i f =0.9a,d i f /d t =100a/s
7 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t
8 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 1 2 3 4 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 20 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 98% typ r ds(on) =f( t j ); i d =0.76a; v gs =10v
9 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 2 4 6 8 0 1 2 3 4 5 6 7 8 9 10 120 v 480 v v gs =f( q gate ); i d =0.9apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 125 c 25 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 2 4 6 8 10 12 e as =f( t j ); i d =0.4a; v dd =50v
10 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 520 540 560 580 600 620 640 660 680 700 v br(dss) =f( t j ); i d =0.25ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e oss = f (v ds )
11 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet 6testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
12 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet 7packageoutlines figure1outlinethinpak5x6smd,dimensionsinmm/inches test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d e2 k1 k2 e millimeters a dim min max inches min max 1 scale z8b00172997 revision issue date european projection 01 17-04-2014 0 2mm 0 1 document no. b1 c d d1 e e1 n l 0.90 1.10 0.035 0.043 0.00 0.10 4.90 4.11 5.90 2.60 0.45 0.05 0.30 5.10 4.31 6.10 2.80 0.65 0.000 0.004 0.193 0.162 0.232 0.102 0.018 0.002 0.012 0.201 0.170 0.240 0.110 0.026 0.30 8 0.50 8 0.012 0.020 1.27 (bsc) 0.05 (bsc) b 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 0.20 0.40 0.008 0.016 l1 0.45 0.65 0.018 0.026
13 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet 8appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d e2 k1 k2 e millimeters a dim min max inches min max 1 scale z8b00172997 revision issue date european projection 01 17-04-2014 0 2mm 0 1 document no. b1 c d d1 e e1 n l 0.90 1.10 0.035 0.043 0.00 0.10 4.90 4.11 5.90 2.60 0.45 0.05 0.30 5.10 4.31 6.10 2.80 0.65 0.000 0.004 0.193 0.162 0.232 0.102 0.018 0.002 0.012 0.201 0.170 0.240 0.110 0.026 0.30 8 0.50 8 0.012 0.020 1.27 (bsc) 0.05 (bsc) b 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 0.20 0.40 0.008 0.016 l1 0.45 0.65 0.018 0.026
14 600vcoolmos?c6powertransistor IPL60R2K1C6S rev.2.0,2014-07-08 final data sheet revisionhistory IPL60R2K1C6S revision:2014-07-08,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2014-07-08 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d e2 k1 k2 e millimeters a dim min max inches min max 1 scale z8b00172997 revision issue date european projection 01 17-04-2014 0 2mm 0 1 document no. b1 c d d1 e e1 n l 0.90 1.10 0.035 0.043 0.00 0.10 4.90 4.11 5.90 2.60 0.45 0.05 0.30 5.10 4.31 6.10 2.80 0.65 0.000 0.004 0.193 0.162 0.232 0.102 0.018 0.002 0.012 0.201 0.170 0.240 0.110 0.026 0.30 8 0.50 8 0.012 0.020 1.27 (bsc) 0.05 (bsc) b 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 0.20 0.40 0.008 0.016 l1 0.45 0.65 0.018 0.026

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